Comparison of Characteristic Curve of Drain-Source Electron Transport Properties in ZnO and GaAs Based MOSFETs Using Monte Carlo Simulation

The effect of gate length and Thickness on the characteristic curve of drain-source current verse gate voltage in ZnO and GaAs MOSFETs have been simulated. Three transistors with gate lengths of 30, 40 and 50 nm are simulated. Simulations show that with a fixed channel length, when the gate length is increases, the output drain current would be increased, the Moreover, with increasing oxide Thickness the drain current is reduced, which results in the reduced drain barrier lowering. At last, A comparison between thickness and gate lengths of two semiconductors have been discussed.